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IS65WV1288DALL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV1288DALL datasheet PDF. This datasheet also covers the IS62WV1288DALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

128K words by 8 bits.

Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation: 12 mW (typical) operating 4 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply: 1.65V--2.2V Vdd (62WV1288DALL) 2.3V--3.6V Vdd (62WV1288DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Industrial and automotive temperature support.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV1288DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS65WV1288DBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816ALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816BLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816DALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816DBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription

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IS62WV1288DALL/DBLL IS65WV1288DALL/DBLL 128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM OCTOBER 2009 FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 12 mW (typical) operating 4 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply: 1.65V--2.2V Vdd (62WV1288DALL) 2.3V--3.6V Vdd (62WV1288DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Industrial and automotive temperature support • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV1288DALL and IS62/65WV1288DBLL are high-speed, 1M bit static RAMs organized as 128K words by 8 bits. It is fabricated using ISSI's high- performance CMOS technology.
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