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IS65WV25616EBLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV25616EBLL datasheet PDF. This datasheet also covers the IS62WV25616EALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (IS62WV25616EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

The ISSI IS62/65WV25616EALL/EBLL/ECLL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Overview

IS62WV25616EALL/EBLL/ECLL IS65WV25616EBLL/ECLL 256Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2018.

Key Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 22 mA (max) at 85°C.
  • CMOS Standby Current: 3.7uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV25616EALL).
  • 2.2V-3.6V VDD (IS62/65WV25616EBLL).
  • 3.3V +/-5% VDD (IS62/65WV25616ECLL).
  • Package : 44-pin TSOP (Type II) 48-pin mini BGA.
  • Commercial, Industrial and Automotive temperature support.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS65WV25616ECLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV25616ALL ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616BLL ULTRA LOW POWER CMOS STATIC SRAM
IS65WV25616DBLL ULTRA LOW POWER CMOS STATIC SRAM
IS65WV2568DALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV2568DBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV2568EALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV2568EBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV20488EALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV20488EBLL ULTRA LOW POWER CMOS STATIC RAM