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IS65WV5128ECLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV5128ECLL datasheet PDF. This datasheet also covers the IS62WV5128EALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

The ISSI IS62/65WV5128EALL/BLL/CLL are highspeed, 4M bit static RAMs organized as 512K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 22 mA (max) at 85°C.
  • CMOS Standby Current: 3.7uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV5128EALL).
  • 2.2V-3.6V VDD (IS62/65WV5128EBLL).
  • 3.3V +/-5% VDD (IS62/65WV5128ECLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV5128EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV5128EALL/EBLL/ECLL IS65WV5128EBLL/ECLL 512Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM APRIL 2017 KEY FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV5128EALL) – 2.2V-3.6V VDD (IS62/65WV5128EBLL) – 3.3V +/-5% VDD (IS62/65WV5128ECLL)  Three state outputs  Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65WV5128EALL/BLL/CLL are highspeed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.
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