IS65WV6416DBLL Datasheet PDF - ISSI ULTRA LOW POWER CMOS STATIC RAM Specs

IS65WV6416DBLL - ULTRA LOW POWER CMOS STATIC RAM

This page provides the datasheet information for the IS65WV6416DBLL, a member of the IS62WV6416DALL ULTRA LOW POWER CMOS STATIC RAM family.

Datasheet Summary

Description

by 16 bits.

CMOS technology.

Features

High-speed access time: 35ns, 45ns, 55ns.
CMOS low power operation: 15 mW (typical) operating 1.5 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply 1.65V--2.2V Vdd (62WV6416DALL) 2.3V--3.6V Vdd (65WV6416DBLL).
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial and automotive temperature support.
2CS Option Ava.

Datasheet Details

Part number	IS65WV6416DBLL
Manufacturer	ISSI
File Size	431.01 KB
Description	ULTRA LOW POWER CMOS STATIC RAM
Datasheet	IS65WV6416DBLL Datasheet
Additional preview pages of the IS65WV6416DBLL datasheet.

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Full PDF Text Transcription

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IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DECEMBER 2012 FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 15 mW (typical) operating 1.5 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V Vdd (62WV6416DALL) 2.3V--3.6V Vdd (65WV6416DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and automotive temperature support • 2CS Option Available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV6416DALL and IS62/65WV6416DBLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.

Published: Jun 9, 2016 |