Datasheet4U Logo Datasheet4U.com

IS66WV1M16DBLL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

This page provides the datasheet information for the IS66WV1M16DBLL, a member of the IS66WV1M16DALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM family.

Description

High-speed access time: 70ns (IS66WV1M16DALL/DBLL) 55ns (IS66WV1M16DBLL) CMOS low power operation Single power supply Vdd = 1.7V - 1.95V (IS66WV1M16DALL) Vdd = 2.5V - 3.6V (IS66WV1M16DBLL) Three state outputs

Features

  • ≤ 0.2V, Vin ≥ Vdd.
  • 0.2V, or Vin ≤ 0.2V, f = 0 Com. Ind. Auto. typ. (2) 100 130 150 75 µA OR ULB Control Vdd = Max. , CS1 = Vil, CS2=Vih Vin ≥ Vdd.
  • 0.2V, or Vin.

📥 Download Datasheet

Datasheet preview – IS66WV1M16DBLL

Datasheet Details

Part number IS66WV1M16DBLL
Manufacturer ISSI (now Infineon)
File Size 363.22 KB
Description ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Datasheet download datasheet IS66WV1M16DBLL Datasheet
Additional preview pages of the IS66WV1M16DBLL datasheet.

📁 Similar Datasheet

  • IS66WV51216DALL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM (Integrated Silicon Solution)
  • IS66WV51216DBLL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM (Integrated Silicon Solution)
  • IS660 - HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR (ISOCOM)
  • IS661 - HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR (ISOCOM)
  • IS662 - HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR (ISOCOM)
  • IS6003 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ETC)
  • IS6005 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ETC)
  • IS6010 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ETC)
  • IS6015 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ETC)
  • IS6030 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ETC)
Other Datasheets by ISSI

Full PDF Text Transcription

Click to expand full text
IS66WV1M16DALL IS66WV1M16DBLL 16Mb LOW VOLTAGE, PRELIMINARY INFORMATION MARCH 2011 ULTRA LOW POWER PSEUDO CMOS STATIC RAM F E A T U R ES DESCRIPTION • High-speed access time: – 70ns (IS66WV1M16DALL/DBLL) – 55ns (IS66WV1M16DBLL) • CMOS low power operation • Single power supply – Vdd = 1.7V - 1.95V (IS66WV1M16DALL) – Vdd = 2.5V - 3.6V (IS66WV1M16DBLL) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available The ISSI IS66WV1M16DALL/DBLL is a high-speed, 16M bit static RAMs organized as 1Mb words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.
Published: |