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IS66WV51216BLL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

This page provides the datasheet information for the IS66WV51216BLL, a member of the IS66WV51216ALL ULTRA LOW POWER PSEUDO CMOS STATIC RAM family.

Description

bit static RAMs organized as 512K words by 16 bits.

fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 55ns.
  • CMOS low power operation.
  • mW (typical) operating.
  • µW (typical) CMOS standby.
  • Single power supply.
  • 1.7V--1.95V Vdd (66WV51216ALL) (70ns).
  • 2.5V--3.6V Vdd (66WV51216BLL) (55ns).
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Lead-free available.

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Datasheet preview – IS66WV51216BLL

Datasheet Details

Part number IS66WV51216BLL
Manufacturer ISSI (now Infineon)
File Size 420.35 KB
Description ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Datasheet download datasheet IS66WV51216BLL Datasheet
Additional preview pages of the IS66WV51216BLL datasheet.

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Full PDF Text Transcription

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IS66WV51216ALL IS66WV51216BLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JANUARY 2010 FEATURES • High-speed access time: 55ns • CMOS low power operation – mW (typical) operating – µW (typical) CMOS standby • Single power supply – 1.7V--1.95V Vdd (66WV51216ALL) (70ns) – 2.5V--3.6V Vdd (66WV51216BLL) (55ns) • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS66WV51216ALL/BLL is a high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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