IS66WV51216EBLL ram equivalent, ultra low power pseudo cmos static ram.
* High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL )
* CMOS Lower Power Operation
* Single Power Supply - VDD =1.7V~1.95V( IS66W.
where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system o.
The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design .
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