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IS66WVE51216TALL Datasheet 8mb Async/page Psram

Manufacturer: ISSI (now Infineon)

Overview: IS66/IS67WVE51216EALL/EBLL/ECLL IS67/IS67WVE51216TALL/TBLL/TCLL 8Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE51216EALL/BLL/CLL and IS66/67WVE51216TALL/BLL/CLL are integrated memory device containing 8Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 512K words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Asynchronous and page mode interface.
  • Dual voltage rails for optional performance.
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
  • Page mode read access.
  • Interpage Read access : 60ns, 70ns.
  • Intrapage Read access : 25ns.
  • Low Power Consumption.
  • Asynchronous Operation < 30 mA.
  • Intrapage Read < 23 mA.
  • Standby < 150 uA (max. ).
  • Deep power-down (DPD).
  • ALL/CLL: < 3µA (Typ.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS66WVE51216TBLL 8Mb Async/Page PSRAM
IS66WVE51216TCLL 8Mb Async/Page PSRAM
IS66WVE51216EALL 8Mb Async/Page PSRAM
IS66WVE51216EBLL 8Mb Async/Page PSRAM
IS66WVE51216ECLL 8Mb Async/Page PSRAM
IS66WVE1M16ALL 1.8V Core Async/Page PSRAM
IS66WVE1M16BLL 3.0V Core Async/Page PSRAM
IS66WVE1M16EALL 16Mb Async/Page PSRAM
IS66WVE1M16EBLL 16Mb Async/Page PSRAM
IS66WVE1M16ECLL 16Mb Async/Page PSRAM

IS66WVE51216TALL Distributor