IS67WVE2M16DBLL Datasheet 3.0V Core Async/Page PSRAM

Manufacturer: ISSI (now Infineon)

Overview: IS66WVE2M16DBLL IS67WVE2M16DBLL 3.0V Core Async/Page PSRAM Overview The IS66WVE2M16DBLL and IS67WVE2M16DBLL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

Download the IS67WVE2M16DBLL datasheet PDF. This datasheet also includes the IS66WVE2M16DBLL variant, as both parts are published together in a single manufacturer document.

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IS67WVE2M16DBLL 3.0v core async/page psram by ISSI (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IS67WVE2M16DBLL
Manufacturer	ISSI (now Infineon)
File Size	386.71 KB
Description	3.0V Core Async/Page PSRAM
Download	IS67WVE2M16DBLL Download (PDF)

Key Features

Asynchronous and page mode interface.
Dual voltage rails for optional performance.
VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
Page mode read access.
Interpage Read access : 70ns.
Intrapage Read access : 20ns.
Low Power Consumption.
Asynchronous Operation < 30 mA.
Intrapage Read < 18mA.
Standby < 150 uA (max. ).
Deep power-down (DPD) < 3uA (Typ).
Low Power Feature.
Temperature Controlled Refresh.
Partial Array Refresh.
Deep power-down.

More Datasheets from ISSI (now Infineon)

Part Number	Description
IS67WVE2M16ALL	1.8V Core Async/Page PSRAM
IS67WVE2M16EALL	32Mb Async/Page PSRAM
IS67WVE2M16EBLL	32Mb Async/Page PSRAM
IS67WVE2M16ECLL	32Mb Async/Page PSRAM
IS67WVE2M16TALL	32Mb Async/Page PSRAM
IS67WVE2M16TBLL	32Mb Async/Page PSRAM
IS67WVE2M16TCLL	32Mb Async/Page PSRAM
IS67WVE1M16EALL	16Mb Async/Page PSRAM
IS67WVE1M16EBLL	16Mb Async/Page PSRAM
IS67WVE1M16ECLL	16Mb Async/Page PSRAM