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IXYS

22N55 Datasheet Preview

22N55 Datasheet

IXFH22N55

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HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avlanche Rated, High dv/dt, Low trr
IXFH 22N55
VDSS
ID (cont)
RDS(on)
trr
= 550 V
= 22 A
= 0.27 W
£ 250 ns
Preliminary data
Symbol
VDSS
VDGR
VGS
V
GSM
ID25
IDM
IAR
EAR
dv/dt
P
D
TJ
TJM
Tstg
TL
M
d
Weight
Symbol
V
DSS
VGS(th)
I
GSS
I
DSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Maximum Ratings
550 V
550 V
±20 V
±30 V
22 A
88 A
22 A
30 mJ
5 V/ns
300 W
-55 ... +150
150
-55 ... +150
300
°C
°C
°C
°C
1.13/10 Nm/lb.in.
6g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
GS
=
0
V,
I
D
=
250
mA
VDS = VGS, ID = 4 mA
V
GS
=
±20
V,
DC
V
DS
=
0
V = 0.8 • V
DS DSS
VGS = 0 V
T
J
=
25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
550
2
V
4.5 V
±100 nA
250 mA
1 mA
0.27 W
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• International standard packages
JEDEC TO-247 AD
• Low R HDMOSTM process
DS (on)
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance (< 5 nH)
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• Power Factor Control Circuits
• Uninterruptible Power Supplies (UPS)
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
94527A (10/95)
1-4




IXYS

22N55 Datasheet Preview

22N55 Datasheet

IXFH22N55

No Preview Available !

IXFH 22N55
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
11 18
4200
450
135
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 • VDSS,
ID = 0.5 • ID25, RG = 2 W (External)
20 40 ns
43 60 ns
70 90 ns
40 60 ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
150 170
29 40
60 85
nC
nC
nC
0.42 K/W
0.15 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
VSD IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr IF = IS, -di/dt = 100 A/ms, VR = 100 V
T
J
=
125°C
22 A
88 A
1.5 V
250 ns
400 ns
TO-247 AD Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4


Part Number 22N55
Description IXFH22N55
Maker IXYS
PDF Download

22N55 Datasheet PDF






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