900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






IXYS

30N60C3 Datasheet Preview

30N60C3 Datasheet

IGBT

No Preview Available !

GenX3TM 600V
IGBTs
High-Speed PT IGBTs for
40-100kHz Switching
IXGA30N60C3
IXGP30N60C3
IXGH30N60C3
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-220 & TO-247)
TO-220
TO-263
TO-263
Maximum Ratings
600 V
600 V
± 20
± 30
V
V
60
30
150
ICM = 60
@ VCES
220
A
A
A
A
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
2.5 g
3.0 g
3.0 g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = 20A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
15 μA
300 μA
±100 nA
2.6 3.0 V
1.8 V
VCES = 600V
IC110 = 30A
VCE(sat)
tfi(typ)
=
3.0V
47ns
TO-263 AA (IXGA)
G
E
C (Tab)
TO-220AB (IXGP)
GC E
TO-247 (IXGH)
C (Tab)
G
CE
C (Tab)
G = Gate
S = Emitter
D = Collector
Tab = Collector
Features
Optimized for Low Switching Losses
Square RBSOA
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2011 IXYS CORPORATION, All Rights Reserved
DS100012B(05/11)




IXYS

30N60C3 Datasheet Preview

30N60C3 Datasheet

IGBT

No Preview Available !

Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs IC = 20A, VCE = 10V, Note 1
Cies
Coes VCE = 25V, VGE = 0V, f = 1MHz
Cres
Qg
Qge IC = 20A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 300V, RG = 5Ω
Note 2
RthJC
RthCS
TO-220
TO-247
IXGA30N60C3 IXGP30N60C3
IXGH30N60C3
Characteristic Values
Min. Typ. Max.
TO-263 Outline
9 16
S
915 pF
78 pF
32 pF
38 nC
8 nC
17 nC
16 ns
26 ns
0.27 mJ
42 75 ns
47 ns
0.09 0.18 mJ
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
17 ns
28 ns
0.44 mJ
70 ns
90 ns
0.33 mJ
0.50
0.21
0.56 °C/W
°C/W
°C/W
TO-220 Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-247 Outline
123
P
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
1
3
=
=
EGmaPtiitentse:r
21=- GCaotlelector
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number 30N60C3
Description IGBT
Maker IXYS
PDF Download

30N60C3 Datasheet PDF






Similar Datasheet

1 30N60C3 IGBT
IXYS





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy