32N50
Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Diode
Applications
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC motor control
- Temperature and lighting controls
Advantages
- Easy to mount with 1 screw (TO-247) (isolated mounting screw hole)
- Space savings
- High power density
IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved
97518H (6/99)
1-4
IXFH 30N50 IXFH 32N50 IXFT 30N50 IXFT 32N50
Symbol g fs
Ciss Coss Crss t d(on) tr td(off) tf
Qg(on) Qgs Q gd
Rth JC Rth CK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
V = 10 V; I = 0.5 I , pulse test DS D D25 VGS = 0 V, VDS = 25 V, f = 1 MHz
5200 640 240
5700 750 310
S p F p F p F
VGS =...
