60N20F Datasheet IXFH60N20F

Manufacturer: IXYS (now Littelfuse)

60N20F ixfh60n20f by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	60N20F
Manufacturer	IXYS (now Littelfuse)
File Size	114.22 KB
Description	IXFH60N20F
Download	60N20F Download (PDF)

Overview

Advance Technical Information HiPerRFTM Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH60N20F IXFT60N20F VDSS ID25 RDS(on) trr = = ≤ ≤ 200V 60A 38mΩ 200ns TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 60 240 60 1.5 10 320 -55 ...

+150 150 -55 ...

+150 300 260 1.13/10 6 4 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.

Key Features

z z z z TAB TO-268 G S TAB G = Gate S = Source D = Drain TAB = Drain z z International standard packages Avalanche Rated RF capable MOSFETs Double metal process for low gate resistnace Low package inductance Fast intrinsic diode Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 200 3.0 5.0 ± 100 V V n.

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