IXYS CPC3701C
The CPC3701 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The CPC3701 is a highly reliable FET device that has been used extensively in our Solid State Relays for industrial and security applications.| Part No. | CPC3701C |
|---|---|
| Datasheet | CPC3701C Download |
| Manufacturer |  IXYS |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Depletion Mode Device Offers Low RDS(on) at Cold Temperatures● Low On-Resistance: 1 max. at 25ºC
● High Input Impedance
● Low VGS(off) Voltage: -1.4 to -3.1V
● Small Package Size SOT-89
APPLICATIONS
● Ignition Modules● Normally-On Switches
● Solid State Relays
● Converters
● Security
● Power Supplies CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET
DESCRIPTION
Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3701 has a minimum breakdown voltage of 60V, and is available in the SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC3701CTRDESCRIPTION
N-Channel Depletion Mode FET, SOT-89 Pkg. Tape and Reel (1000/Reel) Package Pinout (SOT-89) D G D S Circuit Symbol D G S DS-CPC3701-R06 1 INTEGRATED CIRCUITS DIVISION CPC3701ABSOLUTE MAXIMUM RATINGS
@ 25ºC Parameter Ratings Units Drain-to-Source Vol...
