CPC3701C Overview
The CPC3701 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications.
CPC3701C Key Features
- Depletion Mode Device Offers Low RDS(on) at Cold Temperatures
- Low On-Resistance: 1 max. at 25ºC
- High Input Impedance
- Low VGS(off) Voltage: -1.4 to -3.1V
- Small Package Size SOT-89