IXYS CPC3902Z
The CPC3902 is a 250V, N-channel, depletion-mode, metal oxide semiconductor field effect transistor (MOSFET) built upon a proprietary third generation vertical DMOS process that realizes world-class, high voltage performance in an economical silicon gate process. This vertical DMOS process yields a robust device with high input impedance for power applications. The CPC3902 is a highly reliable FET device that has been used extensively in IXYS Integrated Circuits Division’s Solid State Relays for industrial and telecommunications applications.| Part No. | CPC3902Z |
|---|---|
| Datasheet | CPC3902Z Download |
| Manufacturer |  IXYS |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● High Breakdown Voltage: 250V● On-Resistance: 2.5 max. at 25ºC
● Low VGS(off) Voltage: -1.4 to -3.1V
● High Input Impedance
● Small Package Size: SOT-223
APPLICATIONS
● Current Regulator● Normally-On Switches
● Solid State Relays
● Converters
● Telecommunications
● Power Supply Package Pinout D 4 123 GDS CPC3902 250V N-Channel Depletion-Mode FET
DESCRIPTION
As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown, which makes the CPC3902 ideal for use in high-power applications. The CPC3902 is available in the SOT-223 package. Ordering Information Part # CPC3902ZTRDESCRIPTION
SOT-223: Tape and Reel (1000/Reel) Circuit Symbol D G S DS-CPC3902-R04 1 INTEGRATED CIRCUITS DIVISIONABSOLUTE MAXIMUM RATINGS
@ 25ºC Parameter Ratings Units Drain-to-Source Voltage 250 V Gate-to-Source Voltage ±15 V Pulsed Drain Current Total Package Dissipation 1 400 mA 1.8 W Operational Temperature -55 to +110 ºC Junction Temperature, Maximum +125 ºC Storage Temperature -55 to +125 ºC 1 Mounted on 1"x1" 2 oz.
