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CPC3980 - N-Channel MOSFET

General Description

The CPC3980 is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process.

Key Features

  • High Breakdown Voltage: 800V.
  • Low On-Resistance: 45 max. at 25ºC.
  • Low VGS(off) Voltage: -1.4 to -3.1V.
  • High Input Impedance.
  • Small Package Size: SOT-223.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 800V RDS(on) (max) 45 IDSS (min) 100mA Package SOT-223 Features • High Breakdown Voltage: 800V • Low On-Resistance: 45 max. at 25ºC • Low VGS(off) Voltage: -1.4 to -3.1V • High Input Impedance • Small Package Size: SOT-223 Applications • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply • Current Regulators Package Pinout D 4 123 GDS CPC3980 N-Channel Depletion-Mode Vertical DMOS FET Description The CPC3980 is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process.