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CPC3982 - N-Channel MOSFET

General Description

The CPC3982 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits' proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • High Breakdown Voltage: 800V.
  • Low VGS(off) Voltage: -1.4V to -3.1V.
  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • High Input Impedance.
  • Small Package Size: SOT-23.
  • Flammability Rating UL 94 V-0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 800V RDS(on) (max) 380 IDSS (min) 20mA Package SOT-23 Features • High Breakdown Voltage: 800V • Low VGS(off) Voltage: -1.4V to -3.1V • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • High Input Impedance • Small Package Size: SOT-23 • Flammability Rating UL 94 V-0 Applications • Constant Current Regulator • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply CPC3982 800V, 380 N-Channel Depletion-Mode FET Description The CPC3982 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits' proprietary third-generation vertical DMOS process.