DE150-201N09A
Features
- Isolated Substrate
- high isolation voltage (>2500V)
- excellent thermal transfer
- Increased temperature and power cycling capability
- IXYS advanced low Qg process
- Low gate charge and capacitances
- easier to drive
- faster switching
- Low RDS(on)
- Very low insertion inductance (<2n H)
- No beryllium oxide (Be O) or other hazardous materials gfs TJ TJM Tstg TL Weight
VDS = 40 V, ID = 0.5ID25, pulse test 1.6mm (0.063 in) from case for 10 s
S Advantages
-55
+175
°C
- Optimized for RF and high speed switching at frequencies to >100MHz
°C
- Easy to mount- no insulators needed
- High power density
-55
+175 °C
°C
2 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Ciss Coss
VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz
Crss Cstray
Back Metal to any Pin
Td(on) Ton Td(off) Toff
VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External)
Qg(on)...
