DE150-201N09A mosfet equivalent, rf power mosfet.
* Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power
cycling capability
* IXYS advanced low Qg pr.
Symbol Test Conditions
VDSS VDGR
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings
200
V
200
V
.
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