* / Advantages:
* Planar passivated chips
* Very low leakage current
* Very short recovery time
* Improved thermal behaviour
* Very low Irm-values
* Very soft recovery behaviour
* Avalanche voltage rated for reliable operation
* Soft reverse recovery for low EMI/RFI
DHG10I1200PA Datasheet (101.53 KB)
DHG10I1200PA
IXYS
101.53 KB
High performance fast recovery diode.
DHG 10 I 1200 PA preliminary Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode VRRM = IFAV = t.
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