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IXYS

DHG40C600HB Datasheet Preview

DHG40C600HB Datasheet

High Performance Fast Recovery Diode

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Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DHG 40 C 600 HB
2
1
3
DHG 40 C 600 HB
preliminary
VRRM = 600 V
IFAV = 2x 20 A
t rr =
40 ns
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package:
Housing: TO-247
rIndustry standard outline
rEpoxy meets UL 94V-0
rRoHS compliant
Ratings
Symbol
VRRM
IR
VF
IFAV
VF0
rF
R thJC
T VJ
Ptot
I FSM
I RM
t rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
VR = 600 V
VR = 600 V
IF = 20 A
IF = 40 A
IF = 20 A
IF = 40 A
rectangular
d = 0.5
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
t = 10 ms (50 Hz), sine
IF = 20 A; VR = 300 V
-diF/dt = 450 A/µs
CJ junction capacitance
VR = 400 V; f = 1 MHz
TVJ = 25 °C
TVJ = 25°C
TVJ = 125 °C
TVJ = 25°C
TVJ = 125°C
TC = 95°C
TVJ = 150 °C
TC = 25°C
TVJ = 45°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25°C
min. typ. max.
600
25
1.5
2.24
3.15
2.19
3.21
20
1.12
49
0.90
-55 150
140
150
8
12
40
60
12
Unit
V
µA
mA
V
V
V
V
A
V
m
K/W
°C
W
A
A
A
ns
ns
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110808a




IXYS

DHG40C600HB Datasheet Preview

DHG40C600HB Datasheet

High Performance Fast Recovery Diode

No Preview Available !

Symbol
I RMS
R thCH
Tstg
Weight
MD
F
C
Definition
RMS current
thermal resistance case to heatsink
storage temperature
mounting torque
mounting force with clip
Conditions
per terminal 1)
1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2) .
In case of (1) and a common cathode/anode configu ration with a non-isolated backside,
the current capability can be increased by connecting the backside.
DHG 40 C 600 HB
preliminary
Ratings
min. typ. max.
70
0.25
-55 150
6
0.8 1.2
20 120
Unit
A
K/W
°C
g
Nm
N
Product Marking
Logo
Marking on product
DateCode
Assembly Code
Assembly Line
abcdef
YYWWZ
000000
Part number
D = Diode
H = Sonic Fast Recovery Diode
G = extreme fast
40 = Current Rating [A]
C = Common Cathode
600 = Reverse Voltage [V]
HB = TO-247AD (3)
Ordering
Standard
Ordering Number
DHG 40 C 600 HB
Marking on Product
DHG40C600HB
Delivery Mode
Tube
Quantity Code No.
30 505145
Similar Part
DHG40C600PB
Package
TO-220AB (3)
Voltage Class
600
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110808a


Part Number DHG40C600HB
Description High Performance Fast Recovery Diode
Maker IXYS
Total Page 4 Pages
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