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IXYS

DHG5I600PM Datasheet Preview

DHG5I600PM Datasheet

High Performance Fast Recovery Diode

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Sonic-FRD
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
DHG 5 I 600PM
advanced
VRRM =
IFAV =
t rr =
600 V
5A
35 ns
Part number
DHG 5 I 600PM
31
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Backside: isolated
Package:
TO-220FPAC
Industry standard outline
Plastic overmolded tab for
electrical isolation
Epoxy meets UL 94V-0
RoHS compliant
Symbol
VRRM
IR
VF
I FAV
VF0
rF
R thJC
TVJ
Ptot
I FSM
I RM
t rr
CJ
EAS
IAR
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
VR =
VR =
IF =
IF =
600 V
600 V
5A
10 A
TVJ = 25 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
average forward current
IF = 5 A
IF = 10 A
rectangular, d = 0.5
threshold voltage
slope resistance
for power loss calculation only
TVJ = 125 °C
TC = 95 °C
TVJ = 150 °C
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
tp = 10 ms (50 Hz), sine
IF = 5 A;
-di /dt = 100 A/µs
F
VR = 400 V
VR = 300 V; f = 1 MHz
I AS = tbd A; L = 100 µH
VA = 1.5·VR typ.; f = 10 kHz
TC = 25 °C
TVJ = 45 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 25 °C
Ratings
min. typ. max.
600
10
1
2.20
0.00 2.98
2.02
0.00 2.85
5
1.31
133
4.20
-55 150
30
40
2
35
tbd
tbd
tbd
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
mJ
A
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified




IXYS

DHG5I600PM Datasheet Preview

DHG5I600PM Datasheet

High Performance Fast Recovery Diode

No Preview Available !

DHG 5 I 600PM
advanced
Symbol
IRMS
RthCH
MD
FC
T stg
Weight
Definition
RMS current
thermal resistance case to heatsink
mounting torque
mounting force with clip
storage temperature
Conditions
per pin*
Ratings
min. typ. max.
35
0.50
0.4 0.6
20 60
-55 150
2
Unit
A
K/W
Nm
N
°C
g
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-220FPAC
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified


Part Number DHG5I600PM
Description High Performance Fast Recovery Diode
Maker IXYS
Total Page 2 Pages
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