DNA30E2200FE Datasheet | IXYS

Features / Advantages: - Planar passivated chips - Very low leakage current - Very low forward voltage drop - Improved thermal behaviour Applications: - Diode for main rectification - For single and three phase bridge configurations Package: i4-Pac - Isolation Voltage: 3000 V~ - Industry convenient outline - Ro HS pliant - Epoxy meets UL 94V-0 - Soldering pins for PCB mounting - Backside: DCB ceramic - Reduced weight - Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read plete Disclaimer Notice at .littelfuse./disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20220308e Rectifier Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current VR = 2200...