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IXYS

DPF80C200HB Datasheet Preview

DPF80C200HB Datasheet

High Performance Fast Recovery Diode

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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPF80C200HB
1 23
DPF80C200HB
VRRM
I FAV
t rr
preliminary
= 200 V
= 2x 40 A
= 55 ns
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: TO-247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a




IXYS

DPF80C200HB Datasheet Preview

DPF80C200HB Datasheet

High Performance Fast Recovery Diode

No Preview Available !

Fast Diode
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
VR = 200 V
VR = 200 V
forward voltage drop
IF = 40 A
IF = 80 A
IF = 40 A
IF = 80 A
average forward current
TC = 145°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
CJ
I RM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 100 V f = 1 MHz
t rr reverse recovery time
IF = 40 A; VR = 100 V
-diF/dt = 200 A/µs
DPF80C200HB
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TVJ = 175°C
preliminary
Ratings
min. typ. max.
200
200
1
0.2
1.22
1.45
0.95
1.20
40
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
0.25
81
6
11
55
85
0.67 V
5.8 m
0.7 K/W
K/W
215 W
560 A
pF
A
A
ns
ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a


Part Number DPF80C200HB
Description High Performance Fast Recovery Diode
Maker IXYS
Total Page 4 Pages
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