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IXYS

DPG10P400PJ Datasheet Preview

DPG10P400PJ Datasheet

High Performance Fast Recovery Diode

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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
Part number
DPG10P400PJ
1 23
DPG10P400PJ
VRRM
I FAV
t rr
= 2x 400 V
= 10 A
= 45 ns
Backside: isolated
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package: ISOPLUS220
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Soldering pins for PCB mounting
Backside: DCB ceramic
Reduced weight
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a




IXYS

DPG10P400PJ Datasheet Preview

DPG10P400PJ Datasheet

High Performance Fast Recovery Diode

No Preview Available !

DPG10P400PJ
Fast Diode
Symbol
VRSM
VRRM
IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
VR = 400 V
VR = 400 V
forward voltage drop
IF = 10 A
IF = 20 A
IF = 10 A
IF = 20 A
average forward current
TC = 145°C
rectangular
d = 0.5
VF0
rF
R thJC
R thCH
Ptot
I FSM
CJ
I RM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V
VR = 200 V f = 1 MHz
t rr reverse recovery time
IF = 15 A; VR = 270 V
-diF/dt = 200 A/µs
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TVJ = 175°C
Ratings
min. typ. max.
400
400
1
0.18
1.28
1.48
1.02
1.24
10
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
0.50
16
4
5.5
45
70
0.78 V
19.4 m
2.5 K/W
K/W
60 W
130 A
pF
A
A
ns
ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a


Part Number DPG10P400PJ
Description High Performance Fast Recovery Diode
Maker IXYS
Total Page 5 Pages
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