* / Advantages:
* Planar passivated chips
* Low leakage current
* Very short recovery time
* Improved thermal behaviour
* Very low Irm-values
* Very soft recovery behaviour
* Avalanche voltage rated for reliable operation
* Soft reverse recovery for low EMI/RFI
* Lo
DSEI30-12A Datasheet (331.87 KB)
DSEI30-12A
IXYS
331.87 KB
Fast recovery epitaxial diode.
FRED Fast Recovery Epitaxial Diode Single Diode Part number DSEI30-12A 3 1 DSEI30-12A VRRM = 1200 V I FAV = 30 A t rr = 50 ns Backside: cat.
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