DSEP15-12CR diode
epitaxial diode.epitaxial diode.
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TC = 25°C 50/60 Hz RMS; IISOL £ 1 mA mounting force with clip typical
150 2500 20...120 6
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Silicon chip on Direct-Copper-Bond substrate - High power dissip.
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Symbol IR x
Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C
Characteristic .
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