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Silicon Carbide Schottky Rectifier Bridge
in ISOPLUS i4-PACTM
Advanced Technical Information
FBS 10-12SC
VRRM = 1200 V ID(AV)M = 7 A
1
4 51
25
Rectifier Bridge
Symbol
VRRM
IFAV ID(AV)M IFSM
Ptot
Conditions
TC = 90°C; sine 180° (per diode)
TC = 90°C
(bridge)
TVJ = 25°C; t = 10 ms; sine 50 Hz
TC = 25°C
(per diode)
Maximum Ratings
1200
V
3A 7A 12 A
37 W
Symbol
Conditions
Characteristic Values
(T VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
VF
IR
RthJC RthJS
IF = 4 A;
TVJ = 25°C TVJ = 125°C
VR = VRRM;
TVJ = 25°C TVJ = 125°C
(per diode)
1.7 2.1 V 2.4 V
0.2 mA 0.04 mA
4.1 K/W 6.2 K/W
Data according to IEC 60747 referring to a single diode unless otherwise stated.
FBS10-12SC Datasheet
