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IXYS
IXYS

FII30-06D Datasheet Preview

FII30-06D Datasheet

IGBT phaseleg

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FII30-06D pdf
IGBT phaseleg
in ISOPLUS i4-PAC™
FII 30-06D
IC25 = 30 A
VCES = 600 V
VCE(sat) typ. = 1.9 V
3
5
4
1 E72873
2
IGBT
Symbol
VCES
VGES
IC25
IC90
ICM
VCEK
tSC
(SCSOA)
Ptot
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
VGE = ±15 V; RG = 47 ; TVJ = 125°C
RBSOA Clamped inductive load; L = 100 µH
VCE = VCES; VGE = ±15 V; RG = 47
TVJ = 125°C; non-repetitive
TC = 25°C
Maximum Ratings
600 V
± 20 V
30
18
40
VCES
10
A
A
A
µs
100 W
Symbol
VCE(sat)
VGE(th)
ICES
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
QGon
RthJC
RthJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 20 A; VGE = 15 V
IC = 0.5 mA; VGE = VCE
VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ± 20 V
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
Inductive load
VCE = 300 V; IC = 20 A
VGE = ±15 V; RG = 47
TVJ = 125°C
1.9
2.2
4.5
0.6
50
55
200
30
0.75
0.6
2.4 V
V
6.5 V
0.6 mA
mA
200 nA
ns
ns
ns
ns
mJ
mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 20 A
with heatsink compound
1.1 nF
65 nC
1.25 K/W
2.5 K/W
Features
• NPT IGBT technology
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
• HiPerFRED™ diode
- optimized fast and soft reverse
recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PAC™ package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
1-5



IXYS
IXYS

FII30-06D Datasheet Preview

FII30-06D Datasheet

IGBT phaseleg

No Preview Available !

FII30-06D pdf
FII 30-06D
Diode
Symbol
VRRM
IF25
IF90
Symbol
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
Conditions
VF
IRM
trr
RthJC
RthJH
IF = 20 A
TVJ = 25°C
TVJ = 125°C
IF = 15 A; diF/dt = -400 A/µs;
VR = 300 V; VGE = 0 V;
TVJ = 125°C
(per diode)
with heatsink compound
Maximum Ratings
600 V
30 A
15 A
Characteristic Values
min. typ. max.
2.3 2.7
1.6
V
V
7A
50 ns
2.3 K/W
4.6 K/W
Component
Symbol Conditions
TVJ
Tstg
VISOL
FC
operating
IISOL < 1 mA; 50/60 Hz; t = 1 s
Mounting force with clip
Symbol Conditions
CP
dS, dA
dS, dA
Weight
coupling capacity between shorted
pins and mounting tab in the case
pin - pin
pin - backside metal
Maximum Ratings
-55...+150
-55...+125
°C
°C
2500 V~
20...120 Nm
Characteristic Values
min. typ. max.
40 pF
1.7
5.5
6
mm
mm
g
A
E A2
E1
12345
C 4x e
A1
W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
b2
b4b
DIM.
MILLIMETER
MIN MAX
INCHES
MIN MAX
A 4.83 5.21 0.190 0.205
A1 2.59 3.00 0.102 0.118
A2 1.17 2.16 0.046 0.085
b 1.14 1.40 0.045 0.055
b2 1.47 1.73 0.058 0.068
b4 2.54 2.79 0.100 0.110
C 0.51 0.74 0.020 0.029
D 20.80 21.34 0.819 0.840
D1 14.99 15.75 0.590 0.620
D2 1.65 2.03 0.065 0.080
E 19.56 20.29 0.770 0.799
E1 16.76 17.53 0.660 0.690
e 3.81 BSC
0.15 BSC
L 19.81 21.34 0.780 0.840
L1 2.11 2.59 0.083 0.102
Q 5.33 6.20 0.210 0.244
R 2.54 4.57 0.100 0.180
W 0.10 0.004
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
20110119a
2-5


Part Number FII30-06D
Description IGBT phaseleg
Maker IXYS
Total Page 5 Pages
PDF Download
FII30-06D pdf
FII30-06D Datasheet PDF
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