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FMD40-06KC - Power MOSFET

Key Features

  • fast CoolMOS™ 1) power MOSFET 3rd generation - high blocking voltage - low on resistance - low thermals resistance due to r.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information FMD 40-06KC HiPerFETTM CoolMOS™ 1) Power MOSFETs -Boost Chopper Topologyin ISOPLUS i4-PACTM ID25 = 38 A VDSS = 600 V RDSon = 60 mΩ 3 1 4 15 2 MOSFET Symbol VDSS VGS ID25 ID90 Symbol RDSon VGSth IDSS IGSS Qg Q gs Qgd td(on) t r td(off) t f VF RthJC RthJS Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C Maximum Ratings 600 V ±20 V 38 A 25 A Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = 20 A V DS = 20 V; ID = 2.7 mA VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 47 A 60 70 mΩ 2.1 3.9 V 25 µA 250 µA 200 nA 250 nC 25 nC 120 nC VGS= 10 V; VDS = 380 V; ID = 47 A; RG = 1.