Datasheet4U Logo Datasheet4U.com

G1000LL250 - Anode-Shorted Gate Turn-Off Thyristor

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
G1002 N-Channel Enhancement Mode Power MOSFET GOFORD
G1003A N-Channel Enhancement Mode Power MOSFET GFD
G1003B N-Channel MOSFET GOFORD
G1005 MOSFET GOFORD
G1006A N-Channel MOSFET GOFORD

Other Datasheets by IXYS (Littelfuse)

Part Number Description
G1000LM250 Anode-Shorted Gate Turn-Off Thyristor
G1000NC450 Anode Shorted Gate Turn-Off Thyristor
G1000NL450 Anode Shorted Gate Turn-Off Thyristor
G1000QC250 Anode Shorted Gate Turn-Off Thyristor
G1000QC400 Anode Shorted Gate Turn-Off Thyristor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Date:- 18 Feb, 2004 Data Sheet Issue:- 1 Anode-Shorted Gate Turn-Off Thyristor Type G1000L#250 Absolute Maximum Ratings VDRM VRSM VRRM VDC-link VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1). Non-repetitive peak off-state voltage, (note 1). Repetitive peak reverse voltage. Maximum continuous DC-link voltage. MAXIMUM LIMITS 2500 2500 18 1400 UNITS V V V V ITGQM Ls IT(AV)M IT(RMS) ITSM ITSM2 I2t di/dtcr PFGM PRGM IFGM VRGM toff ton Tj op Tstg RATINGS Maximum turn-off current, (note 2). Snubber loop inductance, ITM=ITGQM, (note 2). Mean on-state current, Tsink=55°C (note 3). Nominal RMS on-state current, 25°C (note 3). Peak non-repetitive surge current tp=10ms. Peak non-repetitive surge current, (Note 4) I2t capacity for fusing tp=10ms.