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H0700KC14D Datasheet Preview

H0700KC14D Datasheet

Fast Symmetrical Gate Turn-Off Thyristor

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Date:- 28 September, 2012

Data Sheet Issue:- 2

Fast Symmetrical Gate Turn-Off Thyristor

Type H0700KC14# to H0700KC17#

Absolute Maximum Ratings

VDRM

VRSM

VRRM

VRSM

VOLTAGE RATINGS

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

MAXIMUM

LIMITS

1400-1700

1500-1800

100-1360

UNITS

ITGQ

IT(AVM)

IT(RMS)

ITSM

ITSM2

I2t

di/dtcr

PFGM

PRGM

IFGM

VRGM

toff

ton

Tstg

RATINGS

Peak turn-off current, (note 2)

Snubber loop inductance, ITM=ITGQ, (note 2)

Mean on-state current, Tsink=55°C (note 3)

Nominal RMS on-state current, 25°C (note 3)

Peak non-repetitive surge current tp=10ms

Peak non-repetitive surge current, (Note 4)

I2t capacity for fusing tp=10ms

Critical rate of rise of on-state current, (note 5)

Peak forward gate power

Peak reverse gate power

Peak forward gate current

Peak reverse gate voltage (note 6).

Minimum permissible off-time, ITM=ITGQ, (note 2)

Minimum permissible on-time

Operating temperature range

Storage temperature range

Notes:-

1) VGK=-2Volts.

2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=40A/µs, CS=1.5µF.

3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.

4) Half-sinewave, tp=2ms

5) For di/dt>1000A/µs, consult factory.

6) May exceed this value during turn-off avalanche period.

MAXIMUM

LIMITS

700

0.3

360

700

7.2

80×103

1000

160

100

-40 to +125

-40 to +150

UNITS

µH

A2s

A/µs

µs

°C

Data Sheet. Type H0700KC14# to H0700KC17# Issue 2

Page 1 of 15

September, 2012

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H0700KC14D Datasheet

Fast Symmetrical Gate Turn-Off Thyristor

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Characteristics

Fast Symmetrical Gate Turn-Off Thyristor type H0700KC14# to H0700KC17#

Parameter

VTM Maximum peak on-state voltage

IL Latching current

IH Holding current.

dv/dtcr Critical rate of rise of off-state voltage

IDM Peak off state current

IRM Peak reverse current

IGKM Peak negative gate leakage current

VGT Gate trigger voltage

IGT Gate trigger current

td Delay time

tgt Turn-on time

tf Fall time

tgq Turn-off time

Igq Turn-off gate current

Qgq Turn-off gate charge

ttail Tail time

tgw Gate off-time (see note 3).

RthJK Thermal resistance junction to sink

F Mounting force

Wt Weight

MIN

800

4.5

TYP MAX TEST CONDITIONS

2.4 2.75 IG=1.5A, IT=700A

5 - Tj=25°C

- - VD=80%VDRM, VGR=-2V

- 30 Rated VDRM, VGR=-2V

- 40 Rated VRRM

- 200 VGR=-16V

0.9 - Tj=-40°C

0.8 - Tj=25°C

VD=25V, RL=25mΩ

0.7 - Tj=125°C

2.5 6 Tj=-40°C

0.4 1.5 Tj=25°C

VD=25V, RL=25mΩ

20 200 Tj=125°C

VD=50%VDRM, ITGQ=700A, IGM=30A, diG/dt=15A/µs

0.5 -

Tj=25°C, di/dt=300A/µs, (10%IGM to 90%VD)

3 5 Conditions as for td, (10%IGM to 10%VD)

VD=50%VDRM, ITGQ=700A, CS=1.5µF,

0.5 -

diGQ/dt=40A/µs, VGR=-16V, (90%ITGQ to 10%ITGQ)

5 6.5 Conditions as for tf, (10%IGQ to 10%ITGQ)

190 - Conditions as for tf

580 700 Conditions as for tf

25 35 Conditions as for tf, (10%ITGQ to ITGQ<1A)

- - Conditions as for tf

- 0.063 Double side cooled

- 0.21 Cathode side cooled

- 0.09 Anode side cooled

- 9.0 (see note 2)

120 -

UNITS

V/µs

µs

µC

µs

K/W

Notes:-

1) Unless otherwise indicated Tj=125oC.

2) For other clamping forces, consult factory.

3) The gate off-time is the period during which the gate circuit is

required to remain low impedance to allow for the passage

of tail current.

Data Sheet. Type H0700KC14# to H0700KC17# Issue 2

Page 2 of 15

September, 2012

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