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IXYS

IFRP460 Datasheet Preview

IFRP460 Datasheet

Power MOSFET

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MegaMOSTM
Power MOSFET
IRFP 460
N-Channel Enhancement Mode, HDMOSTM Family
VDSS
ID(cont)
RDS(on)
= 500 V
= 20 A
= 0.27
Symbol
Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
dv/dt
PD
T
J
TJM
T
stg
Md
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
500 V
500 V
±20 V
±30 V
20 A
80 A
20 A
28 mJ
3.5 V/ns
260 W
-55 ... +150
www.DataSheet.net/
150
-55 ... +150
°C
°C
°C
1.15/10 Nm/lb.in.
6g
300 °C
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
l Repetitive avalanche energy rated
l Fast switching times
l
l
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
l High Commutating dv/dt Rating
Applications
l Switching Power Supplies
l Motor controls
Symbol
VDSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
V
DS
=
V,
GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
V = 10 V, I = 12 A
GS D
Pulse test, t 300 µs, duty cycle d 2 %
500 V
2 4V
±100 nA
25 µA
250 µA
0.25 0.27
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92825D (5/98)
1-4
Datasheet pdf - http://www.DataSheet4U.co.kr/




IXYS

IFRP460 Datasheet Preview

IFRP460 Datasheet

Power MOSFET

No Preview Available !

IRFP 460
Symbol
g
fs
Ciss
C
oss
Crss
td(on)
tr
t
d(off)
tf
Qg(on)
Q
gs
Qgd
R
thJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 12 A, pulse test
DS D
V = 0 V, V = 25 V, f = 1 MHz
GS DS
VGS = 10 V, VDS = 250 V, ID = 20 A
R
G
=
4.3
Ω,
(External)
V = 10 V, V = 200 V, I = 20 A
GS DS D
13 21
S
4200
450
135
pF
pF
pF
23 35
81 120
85 130
65 98
ns
ns
ns
ns
135 210
28 40
62 110
nC
nC
nC
0.45 K/W
0.25 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
IS VGS = 0 V
20 A
ISM Repetitive; pulse width limited by TJM
www.DataSheet.net/
80 A
VSD IF = 20 A, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.8 V
trr IF = 20 A, -di/dt = 100 A/µs, VR = 100 V
Q
rr
570 860 ns
5.7 µC
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number IFRP460
Description Power MOSFET
Maker IXYS
Total Page 4 Pages
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