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IFRP460 - Power MOSFET

Key Features

  • W °C °C °C l l l l l G = Gate, S = Source, D = Drain, TAB = Drain D (TAB) 150 -55 +150 Mounting torque Repetitive avalanche energy rated Fast switching times Low RDS (on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MegaMOSTM Power MOSFET IRFP 460 VDSS ID(cont) RDS(on) = 500 V = 20 A = 0.27Ω N-Channel Enhancement Mode, HDMOSTM Family Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ±20 ±30 20 80 20 28 3.5 260 -55 ... +150 www.DataSheet.net/ TO-247 AD V V V V A A A mJ V/ns Features W °C °C °C l l l l l G = Gate, S = Source, D = Drain, TAB = Drain D (TAB) 150 -55 ...