* / Advantages:
* Easy paralleling due to the positive temperature coefficient of the on-state voltage
* Rugged Trench XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 2x Ic - low EMI - Tvjm = 175°C
* Thin wafer
IX150T06M-AG Datasheet (69.47 KB)
IX150T06M-AG
IXYS
69.47 KB
Xpt igbt.
Trench XPT IGBT Chip IX150T06M-AG tentative Type VCE [V] IX150T06M-AG 650 IC Chip Size Package [A] [mm] x [mm] 300 14.2 10.6 sawn on foil.
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