IX150T06M-AG Overview
Key Features
- Easy paralleling due to the positive temperature coefficient of the on-state voltage
- Rugged Trench XPT design (Xtreme light Punch Through) results in
- short circuit rated for 10 µsec
- very low gate charge
- square RBSOA @ 2x Ic
- Tvjm = 175°C
- Thin wafer technology combined with the XPT design results in a competitive low Vce(sat)
- Solderable/sinterable frontside metallization for highly reliable interconnection technology Mechanical Parameters
