IX4351NE
Overview
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses.
- Separate 9A peak source and sink outputs
- Operating Voltage Range: -10V to +25V
- Internal charge pump regulator for selectable negative gate drive bias
- Desaturation detection with soft shutdown sink driver
- TTL and CMOS compatible input
- Under Voltage lockout (UVLO)
- Thermal shutdown
- Open drain FAULT output
