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IX4351NE - 9A Low Side SiC MOSFET/IGBT

IXYS

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Datasheet Details

Part number	IX4351NE
Manufacturer	IXYS
File Size	325.83 KB
Description	9A Low Side SiC MOSFET/IGBT
Datasheet	IX4351NE-IXYS.pdf

IX4351NE Product details

Description

The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs.

Features

Separate 9A peak source and sink outputs.
Operating Voltage Range: -10V to +25V.
Internal charge pump regulator for selectable negative gate drive bias.
Desaturation detection with soft shutdown sink driver.
TTL and CMOS compatible input.
Under Voltage lockout (UVLO).
Thermal shutdown.
Open drain FAULT output.

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Published: Jan 18, 2020 |