IX4351NE Datasheet | IXYS

Features - Separate 9A peak source and sink outputs - Operating Voltage Range: -10V to +25V - Internal charge pump regulator for selectable negative gate drive bias - Desaturation detection with soft shutdown sink driver - TTL and CMOS patible input - Under Voltage lockout (UVLO) - Thermal shutdown - Open drain FAULT output Applications - Driving Si C MOSFETs and IGBTs - On-board charger and DC charging station - Industrial inverters - PFC, AC/DC and DC/DC converters IX4351 Functional Block Diagram IN 6 FAULT 5 Gate and Control Logic VREG 8 4.6V Regulator SET 9 Charge Pump Control 6.8V 4 DESAT 2 VDD 3 VDD 1 OUTSRC 16 OUTSNK 15 VSS 10 VSS 14 OUTSOFT V SS 13 INSOFT 2.6V VDD 12 CAP 11 GND 7 9A Low Side Si C MOSFET & IGBT Driver Description The IX4351NE is designed specifically to drive Si C MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved d V/dt immunity and faster turn-off. Desaturation detection circuitry detects an over current condition of the Si C MOSFET and initiates a soft turn off, thus preventing a potentially damaging d V/dt event. The logic input, IN, is TTL and CMOS patible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller. The IX4351NE is rated for an operational temperature range of -40°C to +125°C, and is available in a thermally enhanced 16-pin power SOIC package. Ordering Information Part...