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IX4351NE - 9A Low Side SiC MOSFET/IGBT

Description

The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs.

Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses.

Features

  • Separate 9A peak source and sink outputs.
  • Operating Voltage Range: -10V to +25V.
  • Internal charge pump regulator for selectable negative gate drive bias.
  • Desaturation detection with soft shutdown sink driver.
  • TTL and CMOS compatible input.
  • Under Voltage lockout (UVLO).
  • Thermal shutdown.
  • Open drain FAULT output.

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Full PDF Text Transcription

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INTEGRATED CIRCUITS DIVISION Features • Separate 9A peak source and sink outputs • Operating Voltage Range: -10V to +25V • Internal charge pump regulator for selectable negative gate drive bias • Desaturation detection with soft shutdown sink driver • TTL and CMOS compatible input • Under Voltage lockout (UVLO) • Thermal shutdown • Open drain FAULT output Applications • Driving SiC MOSFETs and IGBTs • On-board charger and DC charging station • Industrial inverters • PFC, AC/DC and DC/DC converters IX4351 Functional Block Diagram IN 6 FAULT 5 Gate and Control Logic VREG 8 VDD 4.6V Regulator SET 9 Charge Pump Control VDD 6.8V 4 DESAT 2 VDD 3 VDD 1 OUTSRC 16 OUTSNK 15 VSS 10 VSS 14 OUTSOFT V SS 13 INSOFT 2.
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