IXA4IF1200UC Key Features
- Easy paralleling due to the positive temperature coefficient of the on-state voltage
- short circuit rated for 10 µsec
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
- Thin wafer technology bined with the XPT design results in a petitive low VCE(sat)
- SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage