IXA4IF1200UC - XPT IGBT

Datasheet Details

/ Advantages:.
Easy paralleling due to the positive temperature coefficient of the on-state voltage.
Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic.
Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

📁 IXA4IF1200UC Similar Datasheet

Other Datasheets by IXYS

Published: Aug 15, 2016 |