z Silicon Chip on Direct-Copper Bond (DCB) Substrate
z Isolated Mounting Surface z 4000V~ Electrical Isolation z High Blocking Voltage z High Peak Current Capability z Low Saturation Voltage
Advantages
z Low Gate Drive Requirement z High Power Density.
Full PDF Text Transcription for IXBF12N300 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXBF12N300. For precise diagrams, and layout, please refer to the original PDF.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF12N300 VCES = IC110 = VCE(sat) ≤ 3000V 11A 3.2V Symbol Test Condition...
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F12N300 VCES = IC110 = VCE(sat) ≤ 3000V 11A 3.2V Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load PC TJ TJM Tstg TL TSOLD FC VISOL Weight TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60Hz, 1 Minute Maximum Ratings 3000 3000 V V ± 20 ± 30 V V 26 A 11 A 98 A ICM = 98 1500 A V 125 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 260 °C 20..120 / 4.5..27 4000 Nm/lb.in.
IXBF12N300 Datasheet
