IXBF55N300
Features
- Silicon Chip on Direct-Copper Bond (DCB) Substrate
- Isolated Mounting Surface
- 4000V~ Electrical Isolation
- High Blocking Voltage
- High Peak Current Capability
- Low Saturation Voltage
Advantages
- Low Gate Drive Requirement
- High Power Density
Applications
- Switch-Mode and Resonant-Mode Power Supplies
- Uninterruptible Power Supplies (UPS)
- Laser Generators
- Capacitor Discharge Circuits
- AC Switches
© 2021 Littelfuse, Inc.
DS100205C(7/21)
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max. g
I = 55A, V = 10V, Note 1
S f S
C ies
C oes
Cres
V = 25V, V = 0V, f = 1MHz
7300 p F
275 p F
83 p F
Qg
Qge
IC = 55A, VGE = 15V, VCE =...
