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IXBF55N300 - Monolithic Bipolar MOS Transistor

Key Features

  • Silicon Chip on Direct-Copper Bond (DCB) Substrate.
  • Isolated Mounting Surface.
  • 4000V~ Electrical Isolation.
  • High Blocking Voltage.
  • High Peak Current Capability.
  • Low Saturation Voltage Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = IC110 = VCE(sat)  3000V 34A 3.2V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 25 V ± 35 V IC25 TC = 25°C 86 A IC110 TC = 110°C 34 A ICM TC = 25°C, 1ms 600 A SSOA VGE = 15V, TVJ = 125°C, RG = 2 ICM = 110 A (RBSOA) Clamped Inductive Load 1500 V TSC VGE = 15V, TJ = 125°C, (SCSOA) RG = 10, VCE = 1250V, Non-Repetitive 10 µs PC TC = 25°C 357 W TJ -55 ... +150 °C TJM 150 °C T -55 ... +150 °C stg TL Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062 in.