* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Peak Current Capability
* Low Saturation Voltage Advantages
* Low Gate Drive Requirement
* High Power Density Applications
IXBF55N300 Datasheet (1.54 MB)
IXBF55N300
IXYS
1.54 MB
Monolithic bipolar mos transistor.
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = IC110 = VCE(sat) 3000V 34A 3.2V (Electrically Isolated Ta.
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