IXBH5N160G, IXBP5N160G Datasheet - IXYS

IXBH5N160G High Voltage BIMOSFET

High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBP 5N160 G IXBH 5N160 G IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns Preliminary data sheet C TO-220 AB (IXBP) G C E C (TAB) G TO-247 AD (IXBH) E G C C (TAB) E A = Anode, C = Cathode , TAB = Cathode IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) V GE(th) ICES IGES td(on) t r td(off) tf C ies QGon VF RthJC Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 10/0 V; R G = 47 Ω; TVJ = 1.

IXBH5N160G Features

* High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - MOSFET compatible control 10 V turn on gate voltage - fast switching for high frequency operation - reverse conduction capability

* industry standard package - TO-220AB - TO-247AD

IXBH5N160G, IXBP5N160G Datasheet

IXBH5N160G Datasheet Preview — This datasheet PDF includes multiple part numbers: IXBH5N160G, IXBP5N160G. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXBH5N160G, IXBP5N160G

Manufacturer:

IXYS

File Size:

24.62 KB

Description:

High voltage bimosfet.

This datasheet PDF includes multiple part numbers: IXBH5N160G, IXBP5N160G.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IXBH10N170 Bipolar MOS Transistor (IXYS Corporation)

IXBH12N300 Bipolar MOS Transistor (IXYS)

IXBH14N300HV Bipolar MOS Transistor (IXYS)

IXBH15N140 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)

IXBH15N160 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor (IXYS Corporation)

IXBH16N170 BIMOSFET Monolithic Bipolar MOS Transistor (IXYS)

IXBH16N170A Bipolar MOS Transistor (IXYS Corporation)

IXBH20N300 Bipolar MOS Transistor (IXYS)

TAGS

IXBH5N160G IXBP5N160G High Voltage BIMOSFET IXYS

IXBH5N160G Distributor