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IXYS
IXYS

IXBH6N170 Datasheet Preview

IXBH6N170 Datasheet

BIMOSFET Monolithic Bipolar MOS Transistor

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IXBH6N170 pdf
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH6N170
IXBT6N170
VCES =
IC90 =
VCE(sat)
1700V
6A
3.4V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TTLSOLD
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 24Ω
Clamped inductive load
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
1700
1700
V
V
± 20
± 30
V
V
12 A
6A
36 A
ICM = 16
VCES 1350
75
A
V
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
1.13/10
°C
°C
Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVCES
IC = 250μA, VCE = VGE
VGE(th)
sICES
IGES
VCE(sat)
IC = 250μA, VCE = VGE
VCE = 0.8 VCES
VGE = 0V
TJ = 125°C
VCE = 0V, VGE = ±20V
IC = 6A, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1700
V
2.5 5.5 V
10 μA
100 μA
±100 nA
2.84 3.40
3.46
V
V
TO-247 (IXBH)
G
CE
TO-268 (IXBT)
C (TAB)
GE
C (TAB)
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z High blocking voltage
z Integrated Anti-parallel diode
z International standard packages
z Low conduction losses
Advantages
z Low gate drive requirement
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z Uninterruptible power supplies (UPS)
z Laser generator
z Capacitor discharge circuit
z AC switches
© 2008 IXYS CORPORATION, All rights reserved
DS99004C(10/08)



IXYS
IXYS

IXBH6N170 Datasheet Preview

IXBH6N170 Datasheet

BIMOSFET Monolithic Bipolar MOS Transistor

No Preview Available !

IXBH6N170 pdf
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfS IC = 6A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge IC = 6A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tr
td(off)
tf
Resistive Switching times, TJ = 25°C
IC = 6A, VGE = 15V
VCE = 850V, RG = 24Ω
td(on)
tr
td(off)
tf
Resistive Switching times, TJ = 125°C
IC = 6A, VGE = 15V
VCE = 850V, RG = 24Ω
Characteristic Values
Min. Typ. Max.
2.0 3.5
S
378 pF
25 pF
9 pF
17.0
2.5
9.6
nC
nC
nC
32 ns
59 ns
105 ns
690 ns
35 ns
69 ns
100 ns
600 ns
RthJC
RthCS
1.65 °C/W
0.25 °C/W
Reverse Diode
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VF IF = 6A, VGE = 0V, Note 1
trr IF = 6A, VGE = 0V, -diF/dt = 100A/μs
IRM VR = 100V, VGE = 0V
Characteristic Values
Min. Typ. Max.
3.0 V
1.08
12.0
μs
A
IXBH6N170
IXBT6N170
TO-247 (IXBH) Outline
123
P
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
2 - Drain
Inches
Min. Max.
.185
.087
.059
.209
.102
.098
.040
.065
.113
.055
.084
.123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXBT) Outline
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXBH6N170
Description BIMOSFET Monolithic Bipolar MOS Transistor
Maker IXYS
Total Page 5 Pages
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IXBH6N170 pdf
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