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IXDN602 - Ultrafast MOSFET

Download the IXDN602 datasheet PDF. This datasheet also covers the IXDF602 variant, as both devices belong to the same ultrafast mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The IXDF602/IXDI602/IXDN602 dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs.

Each of the two outputs can source and sink 2A of peak current while producing voltage rise and fall times of less than 10ns.

Key Features

  • 2A Peak Source/Sink Drive Current.
  • Wide Operating Voltage Range: 4.5V to 35V.
  • -40°C to +125°C Extended Operating Temperature Range.
  • Logic Input Withstands Negative Swing of up to 5V.
  • Outputs May be Connected in Parallel for Higher Drive Current.
  • Matched Rise and Fall Times.
  • Low Propagation Delay Time.
  • Low 10A Supply Current.
  • Low Output Impedance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXDF602-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS DIVISION Features • 2A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.5V to 35V • -40°C to +125°C Extended Operating Temperature Range • Logic Input Withstands Negative Swing of up to 5V • Outputs May be Connected in Parallel for Higher Drive Current • Matched Rise and Fall Times • Low Propagation Delay Time • Low 10A Supply Current • Low Output Impedance Applications • Efficient Power MOSFET and IGBT Switching • Switch Mode Power Supplies • Motor Controls • DC to DC Converters • Class-D Switching Amplifiers • Pulse Transformer Driver IXD_602 2-Ampere Dual Low-Side Ultrafast MOSFET Drivers Description The IXDF602/IXDI602/IXDN602 dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs.