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IXDN609SI

IXDN609SI is Ultrafast MOSFET manufactured by IXYS.
IXDN609SI datasheet preview

IXDN609SI Datasheet

Part number IXDN609SI
Download IXDN609SI Datasheet (PDF)
File Size 207.08 KB
Manufacturer IXYS
Description Ultrafast MOSFET
IXDN609SI page 2 IXDN609SI page 3

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IXDN609SI Distributor

IXDN609SI Description

The IXD_609SI is an automotive grade, high-speed gate driver that is qualified according to AEC Q100 standards. The IXD_609SI output can source and sink 9A of peak current, while producing rise and fall times of less than 45ns. Both the output and input are rated to 35V.

IXDN609SI Key Features

  • AEC Q100 Qualified
  • 9A Peak Source/Sink Drive Current
  • Wide Operating Voltage Range: 4.5V to 35V
  • AEC Q100 Grade 1 -40°C to +125°C Operating
  • Logic Input Withstands Negative Swing of up to 5V
  • Matched Rise and Fall Times
  • Low Propagation Delay Time
  • Low, 10A Supply Current
  • Low Output Impedance

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