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IXDR35N60BD1 - IGBT

Key Features

  • NPT IGBT technology.
  • low switching losses.
  • low tail current.
  • no latch up.
  • short circuit capability.
  • positive temperature coefficient for easy paralleling.
  • MOS input, voltage controlled.
  • optional ultra fast diode.
  • Epoxy meets UL 94V-0.
  • Isolated and UL registered E153432 Advantages.
  • DCB Isolated mounting tab.
  • Meets TO-247AD package Outline.
  • Package for clip or spring mounting.
  • Space savings.
  • High power density Typical Appl.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXDR 35N60 BD1 IGBT with optional Diode High Speed, Low Saturation Voltage VCES = 600 V IC25 = 38 A V =CE(sat) typ 2.