IXFA130N15X3 - Power MOSFET

Features

International Standard Package.
Low RDS(ON) and QG.
Avalanche Rated.
Low Package Inductance Advantages.
High Power Density.
Easy to Mount.
Space Savings.

IXYS

Datasheet Details

Part number	IXFA130N15X3
Manufacturer	IXYS
File Size	180.68 KB
Description	Power MOSFET
Datasheet	IXFA130N15X3 Datasheet
Additional preview pages of the IXFA130N15X3 datasheet.

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Full PDF Text Transcription

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X3-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA130N15X3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL dT/dt TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V 20 V 30 V TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 130 120 230 65 1.2 50 390 -55 ... +150 150 -55 ... +150 A A A A J V/ns W C C C Maximum Lead Temperature for Soldering Heating / Cooling rate, 175C - 210C 1.6 mm (0.062in.) from Case for 10s 300 °C 50 °C/min 260 °C Mounting Force 10..65 / 2.2..14.6 N/lb 2.

Published: Nov 2, 2020 |