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IXYS

IXFA14N85XHV Datasheet Preview

IXFA14N85XHV Datasheet

Power MOSFET

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X-Class HiPerFETTM
Power MOSFET
Preliminary Technical Information
IXFA14N85XHV
IXFP14N85X
IXFH14N85X
VDSS =
ID25 =
RDS(on)
850V
14A
550m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
850
V
850
V
30
V
40
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
14
35
7
500
50
460
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263HV)
10..65 / 2.2..14.6
Mounting Torque (TO-220 & TO-247)
1.13 / 10
N/lb
Nm/lb.in
TO-263HV
TO-220
TO-247
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
850
V
3.5
5.5 V
100 nA
10 A
1 mA
550 m
TO-263HV
G
S
TO-220 (IXFP)
D (Tab)
G
DS
TO-247 (IXFH)
D (Tab)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2018 IXYS CORPORATION, All Rights Reserved
DS100761A(06/18)




IXYS

IXFA14N85XHV Datasheet Preview

IXFA14N85XHV Datasheet

Power MOSFET

No Preview Available !

IXFA14N85XHV
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
RthJC
RthCS
TO-220
TO-247
Characteristic Values
Min. Typ. Max
4.6
7.7
S
1.0
1043
pF
1110
pF
17
pF
55
177
16
30
36
13
30
7
17
0.50
0.21
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.27 C/W
C/W
C/W
IXFP14N85X
IXFH14N85X
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 7A, -di/dt = 100A/μs
VR = 100V
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Characteristic Values
Min. Typ. Max
14 A
56 A
1.4 V
116
0.9
15.5
ns
μC
A
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537



Part Number IXFA14N85XHV
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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