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IXYS

IXFA20N85XHV Datasheet Preview

IXFA20N85XHV Datasheet

Power MOSFET

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X-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXFA20N85XHV
VDSS =
ID25 =
RDS(on)
850V
20A
330m
TO-263HV
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
dT/dt
TSOLD
FC
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
850
V
850
V
30
V
40
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
20
50
10
800
50
540
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
Heating / Cooling rate, 175C - 210C
1.6 mm (0.062in.) from Case for 10s
300
°C
50
°C/min
260
°C
Mounting Force
10..65 / 2.2..14.6
N/lb
2.5
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 2.5mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
850
V
3.5
5.5 V
100 nA
25 A
1.5 mA
330 m
G
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Package
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2018 IXYS CORPORATION, All Rights Reserved
DS100897A(4/18)




IXYS

IXFA20N85XHV Datasheet Preview

IXFA20N85XHV Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
RGi
Ciss
Coss
Crss
Co(er)
Co(tr)
VDS = 10V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5(External)
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 ID25
Characteristic Values
Min. Typ. Max
6
10
S
0.8
1660
pF
1730
pF
24
pF
67
pF
270
pF
20
ns
28
ns
44
ns
20
ns
63
nC
12
nC
26
nC
0.23 C/W
IXFA20N85XHV
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 20A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
20 A
80 A
1.4 V
190
1.6
16.5
ns
μC
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537



Part Number IXFA20N85XHV
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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IXFA20N85XHV Datasheet PDF





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