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IXFA4N85X - Power MOSFET

Download the IXFA4N85X datasheet PDF. This datasheet also covers the IXFY4N85X variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFY4N85X-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFA4N100P Power MOSFET IXYS Corporation
IXFA4N100Q Power MOSFET IXYS Corporation
IXFA4N100Q Power MOSFET IXYS Corporation
IXFA102N15T Power MOSFET IXYS Corporation
IXFA102N15T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFA12N65X2 Power MOSFET
IXFA130N15X3 Power MOSFET
IXFA14N85XHV Power MOSFET
IXFA18N60X Power MOSFET
IXFA18N65X2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
X-Class HiPERFET Power MOSFET N-Channel Enhancement Mode IXFY4N85X IXFA4N85X IXFP4N85X D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 850 V 850 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3.5 10.0 2 125 50 150 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-252 TO-263 TO-220 0.35 g 2.50 g 3.