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IXYS

IXFA4N85X Datasheet Preview

IXFA4N85X Datasheet

Power MOSFET

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X-Class HiPERFET
Power MOSFET
N-Channel Enhancement Mode
IXFY4N85X
IXFA4N85X
IXFP4N85X
D
G
S
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
850
V
850
V
30
V
40
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
3.5
10.0
2
125
50
150
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
TO-252
TO-263
TO-220
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 2A, Notes 1& 2
© 2019 IXYS CORPORATION, All Rights Reserved
Characteristic Values
Min. Typ. Max.
850
V
3.0
5.5 V
100 nA
5 A
500 A
2.5
VDSS =
ID25 =
RDS(on)
850V
3.5A
2.5
TO-252
(IXFY)
TO-263
(IXFA)
TO-220
(IXFP)
G
S
D (Tab)
G
S
D (Tab)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100768B(11/19)




IXYS

IXFA4N85X Datasheet Preview

IXFA4N85X Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 2A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 2A
RG = 30(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 2A
RthJC
RthCS
TO-220
IXFY4N85X
Characteristic Values
Min. Typ. Max
1.2
2.0
S
3
247
pF
305
pF
5
pF
IXFA4N85X
IXFP4N85X
27
60
13
27
28
20
7.0
2.3
3.3
0.50
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.83 C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 2A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
4A
16 A
1.4 V
170
ns
770 nC
9
A
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm
or less from the package body.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537



Part Number IXFA4N85X
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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