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IXYS

IXFA8N85XHV Datasheet Preview

IXFA8N85XHV Datasheet

Power MOSFET

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PreliminaryTechnical Information
X-Class HiPERFET
Power MOSFET
N-Channel Enhancement Mode
IXFA8N85XHV
IXFP8N85X
IXFQ8N85X
VDSS =
ID25 =
RDS(on)
850V
8A
850m
TO-263HV (IXFA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
850
V
850
V
30
V
40
V
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
8
16
4
300
50
200
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263HV)
Mounting Torque (TO-220 & TO-3P)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
TO-263HV
TO-220
TO-3P
2.5
g
3.0
g
5.5
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 4A, Note 1
Characteristic Values
Min. Typ. Max.
850
V
3.0
5.5 V
100 nA
10 A
750 A
850 m
G
S
TO-220 (IXFP)
D (Tab)
G
DS
TO-3P (IXFQ)
D (Tab)
G
D
S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
International Standard Packages
High Voltage Package
Low RDS(ON) and QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2018 IXYS CORPORATION, All Rights Reserved
DS100804B(06/18)




IXYS

IXFA8N85XHV Datasheet Preview

IXFA8N85XHV Datasheet

Power MOSFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 4A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 VDSS, ID = 4A
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 4A
RG = 10(External)
RthJC
RthCS
TO-220
TO-3P
IXFA8N85XHV IXFP8N85X
IXFQ8N85X
Characteristic Values
Min. Typ. Max
2.7
4.5
S
3
654
pF
714
pF
11
pF
40
120
17.0
3.6
10.0
15
25
32
23
0.50
0.21
pF
pF
nC
nC
nC
ns
ns
ns
ns
0.63 C/W
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 4A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
8A
32 A
1.4 V
125
1.1
18.0
ns
μC
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537



Part Number IXFA8N85XHV
Description Power MOSFET
Maker IXYS
Total Page 3 Pages
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