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IXFH150N20T Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: Advance Technical Information TrenchTM HiperFETTM Power MOSFETs IXFT150N20T IXFH150N20T VDSS = 200V ID25 = 150A ≤ RDS(on) 15mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 200 V 200 V ±20 V ±30 V 150 A 375 A 75 A 1.5 J 890 W 20 V/ns -55 to +150 °C +150 °C -55 to +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 6 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 200 V 3.0 5.0 V ±200 nA 25 μA 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • z International Standard Packages z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.

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