Overview: Preliminary Technical Information TrenchT2TM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH160N15T2 VDSS = ID25 = ≤ RDS(on) trr ≤ 150V 160A 9.0mΩ 160ns Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque Maximum Ratings 150 V 150 V ± 20 V ± 30 V 160 A 440 A 80 A 1.5 J 15 V/ns 880 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250µA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 150 V 2.5 4.5 V ± 200 nA 10 µA 1 mA 7.7 9.
