IXFH22N60P

The IXFH22N60P is PolarHV HiPerFET Power MOSFETs designed by IXYS.

Product Overview

IXYS

Part number	IXFH22N60P
Manufacturer	IXYS
File Size	131.33 KB
Description	PolarHV HiPerFET Power MOSFETs
Datasheet	IXFH22N60P_IXYS.pdf
Additional preview pages of the IXFH22N60P datasheet.

z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.0 ±100 25 250 330 V V nA µA µA mΩ Advantages z Easy to mount z Space savings z High power density V.

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Published: Jun 6, 2010 |